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(25-27) The solution-based deposition methods typically used for MAPbX 3 are difficult to directly adapt for CsPbX 3, due to the lower solubility of cesium precursors in commonly used deposition solvents. The layered QD deposition demonstrates a controlled perovskite film architecture for developing efficient, high open-circuit photovoltaic devices.įilms of perovskite-structured nanomaterials have also been under investigation for photovoltaic applications in CsPbX 3 perovskites. Devices optimized to both QD spin-casting concentration and overall CsPbBr 3 thickness produce champion devices that reach power conversion efficiencies of 5.5% with a V oc value of 1.4 V.
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Utilizing this deposition approach for perovskite photovoltaics is examined using typical planar architecture devices. Additionally, a large loss of organic material during the annealing process is mainly from 1-octadecene left during the QD synthesis. The transformation from QDs into bulk during thermal annealing arises from the resumption of nanoparticle growth and not from sintering as generally assumed. Our layer-by-layer methodology, which makes use of CsPbBr 3 quantum dot (QD) deposition followed by annealing, provides a convenient way to cast stable films of desired thickness. Poor solubility of CsBr in organic solvents makes typical solution deposition methods difficult to adapt for constructing CsPbBr 3 devices. All inorganic cesium lead bromide (CsPbBr 3) perovskite is a more stable alternative to methylammonium lead bromide (MAPbBr 3) for designing high open-circuit voltage solar cells and display devices.